ORGANOMETALLIC PRECURSORS FOR THE FORMATION OF SEMICONDUCTOR MATERIALS BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION: A VIBRATIONAL SPECTROSCOPIC STUDY

Abstract

FTIR and FT-Raman spectroscopy have been used to study species which play a part in MOCVD. These compounds include N-donor adducts of ($CH_{3}$)${2}Cd$ and ($CH{3}$)${3}Ga$ and the dimeric species [($CH{3}$)${2}GaN$($CH{3}$)${2}$]${2}$ which is a likely intermediate in the thermal production of the wide band gap semiconductor GaN from ($CH_{3}$)${3}$ Ga.N($CH{3}$)${2}H$. A search using FT-Raman spectroscopy for possible adducts of ($CH{3}$)${2}Cd$ and ($C{2}$$H_{5}$)$_{2}Cd$ with Te donor molecules important in the formation of the infrared detector CdTe - has also been made.